Evolution of RESET current and filament morphology in low-power HfO 2 unipolar resistive switching memory

Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni / HfO 2 / Si structure with low RESET current of 50   μ A and RESET power of 30   μ W . In addition, a unique cycling evolution of RESET current across more than two ord...

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Published inApplied physics letters Vol. 98; no. 10; pp. 103511 - 103511-3
Main Authors Hou, Tuo-Hung, Lin, Kuan-Liang, Shieh, Jiann, Lin, Jun-Hung, Chou, Cheng-Tung, Lee, Yao-Jen
Format Journal Article
LanguageEnglish
Published American Institute of Physics 10.03.2011
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Summary:Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni / HfO 2 / Si structure with low RESET current of 50   μ A and RESET power of 30   μ W . In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3565239