Band alignments of LaxAlyO films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios

La x Al y O films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and vale...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 28; no. 6; pp. 4702 - 4705
Main Authors Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng
Format Journal Article
LanguageEnglish
Published New York Springer US 01.03.2017
Subjects
Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Science
Optical and Electronic Materials
LaAlO3
La2O3
Leakage Current Density
Band Alignment
Atomic Layer Deposition
Online AccessGet full text

Cover

More Information
Summary:La x Al y O films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy measurements. It was found that the bandgap and valence band offset increase synchronously with increasing Al composition, while the conduction band offset varies slightly. Furthermore, as the composition of Al increased, significant decrease in the gate leakage current for the metal–insulator–semiconductor capacitors using La x Al y O films as insulators was observed due to the formation of larger bandgaps and valence band offsets.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-016-6111-z