Single crystal Gd2O3 epitaxially on GaAs(111)A

Gd 2 O 3 films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situ reflective high energy elec...

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Main Authors Chiang, Tsung-Hung, Wu, Shao-Yun, Huang, Tsung-Shiew, Hsu, Chia-Hung, Kwo, Jueinai, Hong, Minghwei
Format Journal Article
LanguageEnglish
Published 28.09.2014
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Summary:Gd 2 O 3 films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situ reflective high energy electron diffraction and high-resolution X-ray diffraction using synchrotron radiation. The films undergo a structure phase transformation from hexagonal to monoclinic when the film thickness increases from 2 to 6 nm; the 2 nm oxide has H-Gd 2 O 3 (0001)[101&cmb.macr;0]|GaAs(111)[42&cmb.macr;2&cmb.macr;] orientation relationship and the 6 nm film follows M-Gd 2 O 3 (2&cmb.macr;01)[102]|GaAs(111)<42&cmb.macr;2&cmb.macr;> with 3 rotational variants anchored by the 3-fold symmetric substrate. Here, H and M denote the hexagonal and monoclinic phases, respectively. Structure phase transition from non-ambient hexagonal to monoclinic phase was found on Gd 2 O 3 epi-layer grown on GaAs(111)A with increasing thickness.
ISSN:1466-8033
DOI:10.1039/c4ce00734d