Thin film CuInGaSe
The characteristics of polycrystalline, thin film Culn sub(1-) Ga sub(x)Se sub(2) (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 squared centimeter cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-...
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Published in | IEEE Twenty Third Photovoltaic Specialists Conference, 1993 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.1993
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Online Access | Get full text |
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Summary: | The characteristics of polycrystalline, thin film Culn sub(1-) Ga sub(x)Se sub(2) (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 squared centimeter cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-30 nm) CdZnS layer and RF magnetron sputtering of the ZnO transparent conductive film. We attribute the improved performance over our previous CIGS cells to a slightly higher Ga concentration and to the preparation of ZnO films with lower optical losses. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISBN: | 0780312201 9780780312203 |