Thin film CuInGaSe

The characteristics of polycrystalline, thin film Culn sub(1-) Ga sub(x)Se sub(2) (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 squared centimeter cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-...

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Bibliographic Details
Published inIEEE Twenty Third Photovoltaic Specialists Conference, 1993
Main Authors Chen, Wen S, Stewart, J M, Devaney, W E, Mickelsen, R A, Stanbery, B J
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:The characteristics of polycrystalline, thin film Culn sub(1-) Ga sub(x)Se sub(2) (CIGS)/ZnO solar cells with a total area efficiency of 13.7% are reported. These nominally 1 squared centimeter cells are prepared by elemental coevaporation of the selenide material, chemical deposition of a thin (20-30 nm) CdZnS layer and RF magnetron sputtering of the ZnO transparent conductive film. We attribute the improved performance over our previous CIGS cells to a slightly higher Ga concentration and to the preparation of ZnO films with lower optical losses.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISBN:0780312201
9780780312203