Si/SiGe epitaxial-base transistors - Part II: Process integration and analog applications

• Published in: IEEE transactions on electron devices Vol. 42; no. 3; pp. 469 - 482
• Main Authors: Harame, D L, Comfort, J H, Cressler, J D, Crabbe, E F, Sun, J Y-C, Meyerson, B S, Tice, T
• Format: Journal Article
• Language: English
• Published: 01.01.1995

This is the second part of a detailed review of SiGe epitaxial-base technology. The complete review chronicles the developments in materials deposition, device physics and profile design, self-aligned device and circuit demonstrations which culminated in the first fully integrated circuit applicatio...