Si/SiGe epitaxial-base transistors - Part II: Process integration and analog applications

• Published in: IEEE transactions on electron devices Vol. 42; no. 3; pp. 469 - 482
• Main Authors: Harame, D L, Comfort, J H, Cressler, J D, Crabbe, E F, Sun, J Y-C, Meyerson, B S, Tice, T
• Format: Journal Article
• Language: English
• Published: 01.01.1995
• ISSN: 0018-9383
• DOI: 10.1109/16.368043

This is the second part of a detailed review of SiGe epitaxial-base technology. The complete review chronicles the developments in materials deposition, device physics and profile design, self-aligned device and circuit demonstrations which culminated in the first fully integrated circuit applications. In Part I [1] the requirements and processes required for high-quality SiGe film preparation and a detailed overview of SiGe HBT device design were discussed. This part will focus on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology.