An 833MHz 1.5W 18Mb CMOS SRAM with 1.67Gb/s/pin

An 18 Mb complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) operating at 833MHz was studied. The SRAM was fabricated in a 0.18 mu m CMOS process with four levels of copper interconnects. High-frequency operations in SRAM were achieved by managing data timing constraint...

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Published inDigest of technical papers - IEEE International Solid-State Circuits Conference
Main Authors Pilo, H, Allen, A, Covino, J, Hansen, P, Lamphier, S, Murphy, C, Traver, T, Yee, P
Format Journal Article
LanguageEnglish
Published 01.01.2000
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Summary:An 18 Mb complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) operating at 833MHz was studied. The SRAM was fabricated in a 0.18 mu m CMOS process with four levels of copper interconnects. High-frequency operations in SRAM were achieved by managing data timing constraints associated with high-frequency operation, maintaining coherency between SRAM output data timings and echo clock timings and delivering symmetric data windows.
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ISSN:0193-6530