Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

We report here on a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact...

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Bibliographic Details
Published inIEEE Twenty Third Photovoltaic Specialists Conference, 1993
Main Authors Weizer, V G, Fatemi, N S, Korenyi-Both, A L
Format Journal Article
LanguageEnglish
Published 01.01.1993
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Summary:We report here on a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISBN:0780312201
9780780312203