The Kondo Effect in Ce x LaLuScY ( x = 0.05-1.0) High-Entropy Alloys
In the search for electronic phenomena in high-entropy alloys (HEAs) that go beyond the independent-electron description, we have synthesized a series of hexagonal rare earth (RE)-based HEAs: Ce LaLuScY ( = 0.05-1.0). The measurements of electrical resistivity, magnetic susceptibility and specific h...
Saved in:
Published in | Materials Vol. 16; no. 24 |
---|---|
Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Switzerland
09.12.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In the search for electronic phenomena in high-entropy alloys (HEAs) that go beyond the independent-electron description, we have synthesized a series of hexagonal rare earth (RE)-based HEAs: Ce
LaLuScY (
= 0.05-1.0). The measurements of electrical resistivity, magnetic susceptibility and specific heat have shown that the Ce
LaLuScY HEAs exhibit the Kondo effect, which is of a single impurity type in the entire range of employed Ce concentrations despite the alloys being classified as dense (concentrated) Kondo systems. A comparison to other known dense Kondo systems has revealed that the Kondo effect in the Ce
LaLuScY HEAs behaves quite differently from the chemically ordered Kondo lattices but quite similar to the RE-containing magnetic metallic glasses and randomly chemically disordered Kondo lattices of the chemical formula RE1
RE2
(with RE1 being magnetic and RE2 being nonmagnetic). The main reason for the similarity between HEAs and the metallic glasses and chemically disordered Kondo lattices appears to be the absence of a periodic 4
sublattice in these systems, which prevents the formation of a coherent state between the 4
-scattering sites in the T→ 0 limit. The crystal-glass duality of HEAs does not bring conceptually new features to the Kondo effect that would not be already present in other disordered dense Kondo systems. This study broadens the classification of HEAs to correlated electron systems. |
---|---|
ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma16247575 |