Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories

• Published in: Japanese Journal of Applied Physics Vol. 63; no. 8; p. 08SP04
• Main Authors: Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese Journal of Applied Physics 01.08.2024
• Subjects: Deposition; Electrodes; Ferroelectricity; Lead zirconate titanates; Oxidation; Oxygen content; Random access memory; Thickness; Zirconium

A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O3 (PZT) is successfully developed using IrOx/Ir instead of Ir as the bottom electrode. The {111} PZT orientation strongly depends on the IrOx thickness and the O2 content of the atmosphere (PO2) during IrOx deposition. During PZT deposition, the Ir...