Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories

A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O3 (PZT) is successfully developed using IrOx/Ir instead of Ir as the bottom electrode. The {111} PZT orientation strongly depends on the IrOx thickness and the O2 content of the atmosphere (PO2) during IrOx deposition. During PZT deposition, the Ir...

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Published inJapanese Journal of Applied Physics Vol. 63; no. 8; p. 08SP04
Main Authors Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.08.2024
Subjects
Deposition
Electrodes
Ferroelectricity
Lead zirconate titanates
Oxidation
Oxygen content
Random access memory
Thickness
Zirconium
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Summary:A highly {111}-oriented metal-organic CVD Pb(Zr,Ti)O3 (PZT) is successfully developed using IrOx/Ir instead of Ir as the bottom electrode. The {111} PZT orientation strongly depends on the IrOx thickness and the O2 content of the atmosphere (PO2) during IrOx deposition. During PZT deposition, the Ir surface easily oxidizes and becomes rough, resulting in poor {111} PZT orientation. IrOx prevents Ir surface oxidation and transforms the Ir metal via O2 reduction after the PZT deposition completion. Highly {111}-oriented PZT can be obtained by optimizing the IrOx thickness and PO2 content.
Bibliography:ObjectType-Article-1
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content type line 14
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad67e9