APA (7th ed.) Citation

Sato, N., Wang, W., Eshita, T., Oikawa, M., Nakabayashi, M., Takai, K., . . . Saito, H. (2024). Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories. Japanese Journal of Applied Physics, 63(8), 08SP04. https://doi.org/10.35848/1347-4065/ad67e9

Chicago Style (17th ed.) Citation

Sato, Nozomi, et al. "Development of a Pb(Zr,Ti)O3 Capacitor Employing an IrOx/Ir Bottom Electrode for Highly Reliable Ferroelectric Random Access Memories." Japanese Journal of Applied Physics 63, no. 8 (2024): 08SP04. https://doi.org/10.35848/1347-4065/ad67e9.

MLA (9th ed.) Citation

Sato, Nozomi, et al. "Development of a Pb(Zr,Ti)O3 Capacitor Employing an IrOx/Ir Bottom Electrode for Highly Reliable Ferroelectric Random Access Memories." Japanese Journal of Applied Physics, vol. 63, no. 8, 2024, p. 08SP04, https://doi.org/10.35848/1347-4065/ad67e9.