CALCULATION OF STATIC AND DYNAMIC LOSSES IN POWER IGBT‑TRANSISTORS BY POLYNOMIAL APPROXIMATION OF BASIC ENERGY CHARACTERISTICS

Purpose. Development of a calculation technique that allows the Matlab software to determine the static and dynamic losses in power IGBT-transistors and reverse diodes. Methodology. Polynomial approximation of the energy dependences of IGBT-transistors using the least squares method. Simulation in M...

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Bibliographic Details
Published inNatsional'nyi Hirnychyi Universytet. Naukovyi Visnyk no. 2; pp. 82 - 88
Main Authors Plakhtii, O A, Nerubatskyi, V P, Hordiienko, D A, Khoruzhevskyi, H A
Format Journal Article
LanguageEnglish
Published Dnipropetrosk State Higher Educational Institution "National Mining University" 01.03.2020
Subjects
Algorithms
Approximation
Computer programs
Computer simulation
Control algorithms
Control theory
Converters
Dependence
Diodes
Efficiency
Energy
Energy conversion efficiency
Least squares method
Mathematical analysis
Matlab
Polynomials
Power loss
Power semiconductor devices
Semiconductor devices
Simulation
Software
Temperature
Transistors
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Summary:Purpose. Development of a calculation technique that allows the Matlab software to determine the static and dynamic losses in power IGBT-transistors and reverse diodes. Methodology. Polynomial approximation of the energy dependences of IGBT-transistors using the least squares method. Simulation in Matlab/Simulink. Power loss calculation with MelcoSim 5.1. Findings. The proposed calculation method allows the Matlab software to determine with sufficient accuracy the static and dynamic losses in power IGBT-transistors and reverse diodes for any type of semiconductor converter with any control law. The simulation confirms the accuracy of the proposed technique for calculating power losses in semiconductor converters. In addition, the presented method allows determining not only the power loss, but also the temperature of the power transistor to prevent it from failing. The results of the approximation of the characteristics of high-voltage power IGBT-transistors manufactured by Mitsubishi are presented. Originality. The technique of simulation in Matlab/Simulink program for calculation of static and dynamic power losses in power IGBT-transistors, as well as power losses in reverse diodes is developed. The presented method allows determining power losses and efficiency in any semiconductor converter with any control algorithm, which is a very useful tool in research. Practical value. The presented technique in Matlab simulation allows determining power losses and temperature of power transistors of any type in the composition of any semiconductor converter.
ISSN:2071-2227
2223-2362
DOI:10.33271/nvngu/2020-2/082