Features of Inelastic and Elastic Characteristics of Si and SiO2/Si Structures

• Published in: Journal of Nano- and Electronic Physics Vol. 13; no. 5
• Main Authors: Onanko, A P, Kuryliuk, V V, Onanko, Y A, Kuryliuk, A M, Charnyi, D V, Dmytrenko, O P, Kulish, M P, Pinchuk-Rugal, T M
• Format: Journal Article
• Language: English; Russian; Ukrainian
• Published: Sumy Ukraine Sumy State University, Journal of Nano - and Electronic Physics 01.01.2021
• Subjects: Activation energy; Defect annealing; Electron energy; Electron irradiation; Energy value; Frenkel defects; High temperature; Internal friction; Oxidation; Point defects; Radiation damage; Radiation dosage; Silicon dioxide; Silicon substrates; Thickness; X ray irradiation
• ISSN: 2077-6772; 2306-4277
• DOI: 10.21272/jnep.13(5).05017

Measurement of temperature dependences of internal friction (IF) was performed on identical Si p-type substrates, orientation (100), doped with boron B, with specific resistivity ρ ≈ 7.5 Ohm×cm and thickness h ≈ 4.7·105 nm. The samples passed the same technological route after deposition of a SiO2 layer with thickness h ≈ 600 nm because of high-temperature oxidation in dry O2 at T0 ≈ 1300 K. It was found that the annealing of structural defects in Si changes the shape of the IF temperature spectrum Q – 1(T). The IF peaks QM – 1 formed by point defects could be observed under the condition that Si was heated at a rate V = ΔT/Δt ≤ 0.1 K/s. After X-ray irradiation with a dose γ ≈ 104 R, the IF maximum at TM1 ≈ 320 K increases sharply; its height Q – 1M1 increases almost threefold with a twofold decrease in the width ΔQ – 1M1, which testifies to the process of relaxation of radiation defects of the same type. The activation energy value H1 ≈ 0.63 eV was obtained for the IF peak QM – 1 in the Si plate at TM1 ≈ 320 K. The proximity of the obtained activation energy H1 at TM1 ≈ 320 K to the migration energy H0 ≈ 0.85 eV for positively charged interstitial atoms Sii+ suggests a relaxation mechanism due to the reorientation of interstitial atoms Sii. Upon electron irradiation, as a result of the collision of electrons with Si atoms, Frenkel defects are formed. Calculations show that the electron energy W ≈ 1 MeV, which corresponds to the experiment, is sufficient to shift Si atoms from their equilibrium positions. After irradiation with a dose γ ≈ 105 R, the IF Q – 1M1 maximum height at TM1 ≈ 320 K did not change significantly in comparison with the IF Q – 1(T) spectrum before irradiation that indicates a special effect of the dose γ ≈ 105 R.