A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3[Formula Omitted]) and a Resolution FoM of 0.43 pJ[Formula Omitted]K[Formula Omitted] in 65-nm CMOS

• Published in: IEEE journal of solid-state circuits Vol. 53; no. 12; p. 3356
• Main Authors: Choi, Woojun, Lee, Yongtae, Kim, Seonhong, Lee, Sanghoon, Jang, Jieun, Chun, Junhyun, Makinwa, Kofi A A, Chae, Youngcheol
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.12.2018
• Subjects: CMOS; Frequency locking; Intermetallic compounds; Phase shift; Resistors; Sensors; Silicides; Temperature dependence; Temperature sensors
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2018.2871622

This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an [Formula Omitted] poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF’s phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 [Formula Omitted]. It can operate from supply voltages as low as 0.85 V and consumes 68 [Formula Omitted]. A sensor based on a PPF made from silicided p-poly resistors and metal–insulator–metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3[Formula Omitted]) from −40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ[Formula Omitted].