Demonstration of Low Vt Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a Dy2O3 Cap Layer

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Bibliographic Details
Published inIEEE electron device letters Vol. 28; no. 11; p. 957
Main Authors Yu, H.Y, Chang, S.Z, Veloso, A, Lauwers, A, Adelmann, C, Onsia, B, Lehnen, P, Kauerauf, T, Brus, S, Yin, K.M, Absil, P, Biesemans, S
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.11.2007
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.906464