Yield, Surface Prep for Nano Devices

Nanoscale emerging research devices in the "beyond CMOS scaling" realm cover many applications and state variables. There have been many discussions of the characteristics, performance requirements, etc., of these devices, but the manufacture of these devices and the resulting yield has no...

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Bibliographic Details
Published inSemiconductor International Vol. 31; no. 6; p. 80
Main Author Busnaina, Ahmed
Format Trade Publication Article
LanguageEnglish
Published Newton Reed Business Information, a division of Reed Elsevier, Inc 01.06.2008
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Summary:Nanoscale emerging research devices in the "beyond CMOS scaling" realm cover many applications and state variables. There have been many discussions of the characteristics, performance requirements, etc., of these devices, but the manufacture of these devices and the resulting yield has not been addressed. However, if these devices are expected to be in the development stage during the next 10 years, there is a need to address how they will be manufactured, including yield issues and what the future holds for surface preparation and cleaning approaches. Contamination and defects are responsible for as much as 75% or more of yield loss in IC fabrication. Defect removal processes constitute 80-100 out of 400 processing steps. When we start manufacturing nanoscale emerging research devices (i.e., nanomechanical memory, molecular memories, ionic memory), which may require the assembly of nanoelements, surface preparation and cleaning methods will be very different from what we are familiar with. Surfaces prepared for nanoscale applications need to be free of particulate contamination on the order of 1 nm or less. To this extent, many of the techniques we currently use must be optimized to meet this challenge. However, once directed assembly of nanotubes or other nanoelements is utilized, then current techniques will remove contaminants as well as assembled device nanostructures. This is because current surface preparation is focused on the non-selective removal of contaminants.
ISSN:0163-3767