FRAM cell design with high immunity to fatigue and imprint for 0.5 [mu]m 3 V 1T1C 1 Mbit FRAM
Saved in:
Published in | IEEE transactions on electron devices Vol. 47; no. 4; p. 781 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.04.2000
|
Online Access | Get full text |
Cover
Loading…
ISSN: | 0018-9383 1557-9646 |
---|---|
DOI: | 10.1109/16.830994 |