Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz
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Published in | IEEE electron device letters Vol. 23; no. 10; p. 573 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.10.2002
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2002.802667 |