A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
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Published in | IEEE transactions on electron devices Vol. 47; no. 7; p. 1536 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.07.2000
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Online Access | Get full text |
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ISSN: | 0018-9383 1557-9646 |
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DOI: | 10.1109/16.848304 |