SiGe fuels high-speed communications

Like many gallium arsenide devices, the Si/SiGe heterojunction bipolar transistor (HBT) can also address several high-speed wireless and wired needs by effectively mimicking the bandgap-engineered attributes of compound semiconductors in a silicon device. Work in this area has launched a revolution...

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Bibliographic Details
Published inSemiconductor International Vol. 23; no. 13; p. 62
Main Authors Ahlgren, David C, Jagannathan, Basanth, Stephen St Onge, Dupuis, Mark D
Format Trade Publication Article
LanguageEnglish
Published Newton Reed Business Information, a division of Reed Elsevier, Inc 01.11.2000
Subjects
Circuits
CMOS
Code Division Multiple Access
Defects
Design
Designers
Economies of scale
Gallium arsenide
High speed
Modularity
Molecular beam epitaxy
Network switching
R&D
Research & development
Semiconductors
Silicon wafers
Technology
Temperature
Thermal cycling
Transistors
Trends
Wireless communications
United States > US
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Summary:Like many gallium arsenide devices, the Si/SiGe heterojunction bipolar transistor (HBT) can also address several high-speed wireless and wired needs by effectively mimicking the bandgap-engineered attributes of compound semiconductors in a silicon device. Work in this area has launched a revolution in the semiconductor industry. Starting with a 200 mm silicon wafer, unprecedented levels of functionality can be integrated by combining SiGe analog and radio frequency circuits and CMOS logic components for state-of-the-art BiC-MOS production. SiGe technology is combining active and passive elements, and logic and analog functions in ways never before possible.
ISSN:0163-3767