Comparative Analysis of Negative Capacitance Double Gate Junctionless Transistor and Tri-Gate FinFET for Analog Performance

• Published in: Advances in VLSI, Communication, and Signal Processing Vol. 911; pp. 579 - 590
• Main Authors: Bairwa, Deepak, Rai, Manish Kumar, Rai, Sanjeev
• Format: Book Chapter
• Language: English
• Published: Singapore Springer 2022; Springer Nature Singapore
• Series: Lecture Notes in Electrical Engineering
• Subjects: Analog; Double gate junction less transistor; Negative capacitance; RF FOMs; Triple gate FinFET
• ISBN: 9811926301; 9789811926303
• ISSN: 1876-1100; 1876-1119
• DOI: 10.1007/978-981-19-2631-0_50

In this paper, the comparative analysis of two device structures has been proposed for analog and RF performance i.e. double gate junctionless transistor DGJLT and TG-FinFET with the presence of the negative capacitance phenomena as all the results are getting at the constant thickness of 1 nm of HfO2 material, Silvaco atlas tool has been used. In this paper, the simulated parameters are the gate to source capacitance Cgs\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{C}}_{{{\text{gs}}}$$\end{document}, the gate to drain capacitance Cgd\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{C}}_{{{\text{gd}}}$$\end{document}, trans-conductance gm\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{g}}_{{\text{m}}}$$\end{document}, output conductance gds\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{g}}_{{{\text{ds}}}$$\end{document}, Early voltage VEA\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{V}}_{{{\text{EA}}}$$\end{document}, cut off frequency fT\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{f}}_{{\text{T}}}$$\end{document}, intrinsic gain AV\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\text{A}}_{{\text{V}}}$$\end{document}, trans-conductance generation factor TGF, trans-conductance frequency product TFP, gain frequency product GFP. Simulated analog and RF performance parameters are showing better results for both structures when having negative capacitance material.