Refractive index change of a D2+ complex in GaAs/AlxGa1−xAs quantum ring

• Published in: Journal of materials science Vol. 57; no. 18; pp. 8417 - 8424
• Main Authors: Hernández, N., López-Doria, R. A., Rivera, I. E., Fulla, M. R.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2022; Springer Nature B.V
• Subjects: Advanced Nanomaterials; Aluminum gallium arsenides; Approximation; Characterization and Evaluation of Materials; Chemistry and Materials Science; Classical Mechanics; Crystallography and Scattering Methods; Doppler effect; Energy; Field strength; Gallium arsenide; Hydrostatic pressure; Magnetic fields; Materials Science; Nanomaterials; Polymer Sciences; Quantum dots; Red shift; Refractivity; Rings (mathematics); Solid Mechanics; Terahertz frequencies
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1007/s10853-021-06763-8

The linear, nonlinear, and total relative refractive index change of a D 2 + complex confined in a GaAs quantum ring and capped by a A l x G a 1 - x A s matrix, under hydrostatic pressure and magnetic fields is reported. The variations of the angle between donors allow enhancing, reducing, and even nullifying the relative refractive index change. A red-shift of the relative refractive index change profiles by increasing the QR size is observed. In addition, when the concentration of the dopant material in the barrier is reduced, the electron has a higher probability of coupling with the optical field. A remarkable periodic oscillation of the relative refractive index change by increasing the magnetic field strength is obtained. The results reveal the possibility to tune the relative refractive index change within the THz band (below 20 meV).