Characterization of Ge Doping on Sb sub(2)Te sub(3) for High-Speed Phase Change Memory Application
The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, a...
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Published in | Chinese physics letters Vol. 32; no. 7; pp. 077302 - 1-077302-3 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge sub(2)Sb sub(2)Te sub(5). In addition, Ge sub(0.11)Sb sub(2)Te sub(3) presents extremely rapid reverse switching speed (10 ns), and up to 10 super(5) programming cycles are obtained with stable set and reset resistances. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/32/7/077302 |