Characterization of Ge Doping on Sb sub(2)Te sub(3) for High-Speed Phase Change Memory Application

The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, a...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 32; no. 7; pp. 077302 - 1-077302-3
Main Authors Zhu, Yue-Qin, Zhang, Zhong-Hua, Song, San-Nian, Xie, Hua-Qing, Song, Zhi-Tang, Shen, Lan-Lan, Li, Le, Wu, Liang-Cai, Liu, Bo
Format Journal Article
LanguageEnglish
Published 01.07.2015
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The phase change material of Ge-doped Sb sub(2)Te sub(3) is shown to have higher crystallization temperature and better thermal stability compared with pure Sb sub(2)Te sub(3). Ge sub(0.11)Sb sub(2)Te sub(3) alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge sub(2)Sb sub(2)Te sub(5). In addition, Ge sub(0.11)Sb sub(2)Te sub(3) presents extremely rapid reverse switching speed (10 ns), and up to 10 super(5) programming cycles are obtained with stable set and reset resistances.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/077302