Large remanent polarization and small leakage in sol-gel derived Bi(Zn sub(1/2)Zr sub(1/2))O sub(3)-PbTiO sub(3) ferroelectric thin films
The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-T sub(C) (1-x)Bi(Zn sub(1/2)Zr sub(1/2))O sub(3)-xPbTiO sub(3) (x= 0.7-0.9) thin films with high (100) orientation wer...
Saved in:
Published in | Dalton transactions : an international journal of inorganic chemistry Vol. 42; no. 2; pp. 585 - 590 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-T sub(C) (1-x)Bi(Zn sub(1/2)Zr sub(1/2))O sub(3)-xPbTiO sub(3) (x= 0.7-0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO sub(2)/Si substrates via a sol-gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol-gel-derived BZZ-PT thin films were investigated. A large remanent polarization with 2P sub(r) up to 110 mu C cm super(-2) and a small leakage current of 3.8 10 super(-7) A cm super(-2) under an electric field of 150 kV cm super(-1) are observed on the 0.2BZZ-0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 1477-9226 1477-9234 |
DOI: | 10.1039/c2dt31996a |