Large remanent polarization and small leakage in sol-gel derived Bi(Zn sub(1/2)Zr sub(1/2))O sub(3)-PbTiO sub(3) ferroelectric thin films

• Published in: Dalton transactions : an international journal of inorganic chemistry Vol. 42; no. 2; pp. 585 - 590
• Main Authors: Zhang, Linxing, Chen, Jun, Zhao, Hanqing, Fan, Longlong, Rong, Yangchun, Deng, Jinxia, Yu, Ranbo, Xing, Xianran
• Format: Journal Article
• Language: English
• Published: 01.12.2012
• Subjects: Devices; Electric fields; Ferroelectric materials; Ferroelectricity; Perovskite structure; Polarization; Sol gel process; Thin films
• ISSN: 1477-9226; 1477-9234
• DOI: 10.1039/c2dt31996a

The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-T sub(C) (1-x)Bi(Zn sub(1/2)Zr sub(1/2))O sub(3)-xPbTiO sub(3) (x= 0.7-0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO sub(2)/Si substrates via a sol-gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol-gel-derived BZZ-PT thin films were investigated. A large remanent polarization with 2P sub(r) up to 110 mu C cm super(-2) and a small leakage current of 3.8 10 super(-7) A cm super(-2) under an electric field of 150 kV cm super(-1) are observed on the 0.2BZZ-0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices.