An innovative way of etching MoS sub(2): Characterization and mechanistic investigation

We report a systematic study of the etching of MoS sub(2) crystals by using XeF sub(2) as a gaseous reactant. By controlling the etching process, monolayer MoS sub(2) with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of e...

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Published inNano research Vol. 6; no. 3; pp. 200 - 207
Main Authors Huang, Yuan, Wu, Jing, Xu, Xiangfan, Ho, Yuda, Ni, Guangxin, Zou, Qiang, Koon, Gavin Kok Wai, Zhao, Weijie, Castro Neto, AH, Eda, Goki, Shen, Chengmin, Oezyilmaz, Barbaros
Format Journal Article
LanguageEnglish
Published 01.03.2013
Subjects
Arrays
Crystals
Etching
Graphene
Molybdenum disulfide
Nanocomposites
Nanomaterials
Nanostructure
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Summary:We report a systematic study of the etching of MoS sub(2) crystals by using XeF sub(2) as a gaseous reactant. By controlling the etching process, monolayer MoS sub(2) with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS sub(2). Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS sub(2), which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF sub(2) can also be extended to other interesting two-dimensional crystals. Graphical abstract: [Figure not available: see fulltext.]
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ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-013-0296-8