Formation of Ge0 and GeO x nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge+ implanted SiO2/Si heterostructures are presented. These heterostructures have a 30nm thick Ge+ ion implanted amorphous SiO2 layer on p-type Si. The chemical-state transformation of the host-matrix comp...

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Bibliographic Details
Published inApplied surface science Vol. 349; pp. 780 - 784
Main Authors Zatsepin, A F, Zatsepin, DA, Zhidkov, I S, Kurmaev, E Z, Fitting, H-J, Schmidt, B, Mikhailovich, AP, Lawniczak-Jablonska, K
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Annealing
Formations
Heterostructures
Silicon
Silicon dioxide
Spectra
Thin films
Transformations
X-ray photoelectron spectroscopy
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Summary:The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge+ implanted SiO2/Si heterostructures are presented. These heterostructures have a 30nm thick Ge+ ion implanted amorphous SiO2 layer on p-type Si. The chemical-state transformation of the host-matrix composition after Ge+ ion implantation and rapid thermal annealing (RTA) are discussed. The XPS-analysis performed allows to conclude the formation of Ge0 and GeO x clusters within the samples under study. It was established, that the annealing time strongly affects the degree of oxidation states of Ge-atoms.
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ISSN:0169-4332
DOI:10.1016/j.apsusc.2015.05.090