Firing-stable PassDop passivation for screen printed n-type PERL solar cells based on a-SiN sub(x):P
Rear side passivation and local back surface field formation are two of the main technological challenges for n-type PERL silicon solar cells. A promising approach is the PassDop process. This process combines a phosphorous doped passivation layer deposited on the rear side with a subsequent laser p...
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Published in | Solar energy materials and solar cells Vol. 126; pp. 96 - 100 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Rear side passivation and local back surface field formation are two of the main technological challenges for n-type PERL silicon solar cells. A promising approach is the PassDop process. This process combines a phosphorous doped passivation layer deposited on the rear side with a subsequent laser process to create both a local contact opening as well as a local back surface field. In this paper we introduce a new layer system based on doped amorphous silicon nitride (the fPassDop process) which is able to passivate the n-type surface after a firing step as typically used for screen printed contacts. After the firing step, an effective recombination velocity < 5 cm/s can be reached with this layer. The measured sheet resistance is in the range of 60 [Omega]/sq after the laser process. In a first test the fPassDop process is applied to small area solar cells achieving a conversion efficiency of 21.3% (675 mV V sub(oc)). Additionally, we fabricated large area n-type solar cells with screen printed front side contacts achieving 20.1% efficiency and V sub(oc) of 668 mV. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0927-0248 |
DOI: | 10.1016/j.solmat.2014.03.047 |