Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.

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Bibliographic Details
Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 10; no. 19; p. 7731
Main Authors Ma, Congcong, Wu, Zhengyuan, Jiang, Zhuoxun, Chen, Ying, Ruan, Wei, Zhang, Hao, Zhu, Heyuan, Zhang, Guoqi, Kang, Junyong, Tong-Yi, Zhang, Chu, Junhao, Fang, Zhilai
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 01.01.2022
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Summary:Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.
ISSN:2050-7526
2050-7534
DOI:10.1039/d2tc90092k