Thermoelectrical properties of In(1-x)Ga(x)As and InAs crystals irradiated with fast electrons

• Published in: Crystal research and technology (1979) Vol. 39; no. 7; pp. 598 - 601
• Main Authors: Aliyev, M I, Rashidova, Sh Sh, Aliyev, I M, Huseynova, M A, Jafarova, M A
• Format: Journal Article
• Language: English
• Published: 01.07.2004
• ISSN: 0232-1300
• DOI: 10.1002/crat.200310230

The thermoelectric power in In(1-x)Ga(x)As (x = 0.01-0.04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10 exp 16 to 2 x 10 exp 17 el/sq cm on the interval 80-400 K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In(1-x)Ga(x)As solid solutions they do on optical phonons and ionized impurities.