Chemical Vapour Deposition of Si sub 3 N sub 4 From a Gas Mixture of Si sub 2 Cl sub 6 , NH sub 3 and H sub 2

• Published in: Journal of materials science Vol. 21; no. 11; pp. 3836 - 3842
• Main Authors: Motojima, S, Iwamori, N, Hattori, T
• Format: Journal Article
• Language: English
• Published: 01.11.1986
• ISSN: 0022-2461

Si sub 3 N sub 4 layers were obtained on a quartz substrate from a gas mixture of Si sub 2 Cl sub 6 , NH sub 3 and hydrogen under a reduced pressure in a temperature range of 800-1300 deg C. Amorphous Si sub 3 N sub 4 layers that were dense and adherent to the substrate were obtained in a temperature range of 800-1100 deg C. On the other hand, alpha -Si sub 3 N sub 4 layers were obtained at 1200 deg C and a source-gas ratio (N/Si) of 1.33-1.77. The lowest deposition temperature of amorphous Si sub 3 N sub 4 was considered to be approx 700 deg C. The microhardness of amorphous Si sub 3 N sub 4 obtained in a temperature range of 800-1100 deg C was 2400-2600 kg mm exp --2 (load: 50 g), and that of alpha -Si sub 3 N sub 4 obtained at 1200 deg C was 3400 kg mm exp --2 . Chlorine contents in the Si sub 3 N sub 4 layer decreased wtih increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure. 31 ref.--AA