GaN quantum dots grown on non-polar a-plane SiC by plasmaassisted molecular beam epitaxy

We report on the growth of GaN quantum dots on AlN grown on (11-20) 6H-SiC. It is shown that the Stranski-Krastanow growth mode of GaN on this surface results in the formation of GaN quantum dots aligned along [1-100]. Their morphology and optical properties were studied as a function of GaN coverag...

Full description

Saved in:
Bibliographic Details
Published inPhysica status solidi. C Vol. 2; no. 7; pp. 2341 - 2344
Main Authors Founta, S, Rol, F, Andreev, T, Gayral, B, Bellet-Amalric, E, Moisson, C, Mariette, H, Daudin, B
Format Journal Article
LanguageEnglish
Published 01.01.2005
Online AccessGet full text

Cover

More Information
Summary:We report on the growth of GaN quantum dots on AlN grown on (11-20) 6H-SiC. It is shown that the Stranski-Krastanow growth mode of GaN on this surface results in the formation of GaN quantum dots aligned along [1-100]. Their morphology and optical properties were studied as a function of GaN coverage. The cathodoluminescence of the dots was observed above the GaN gap energy, as an indication that the electric field is greatly reduced in these non-polar heterostructures. The persistence of photoluminescence intensity as a function of temperature was observed, as a signature of carrier localization inside the quantum dots.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1610-1634
DOI:10.1002/pssc.200461360