Optically carried microwave signal modulation depth enhancement by stimulated Brillouin scattering in PCFs

Using a microstrip line employing periodically perforated ground metal on a GaAs monolithic microwave integrated circuit (MMIC), a highly miniaturised and broadband impedance transformer was developed for application to low impedance matching in broadband. Its size was 0.132 mm2 on GaAs substrate, w...

Full description

Saved in:
Bibliographic Details
Published inElectronics letters Vol. 42; no. 2; p. 1
Main Authors Robert, B, Norcia-Molin, S, Dolfi, D, Tonda, S, Huignard, J-P, Frey, R, Melin, G, Gasca, L
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 19.01.2006
Subjects
Broadband
Gallium arsenide
Gallium arsenides
Impedance
Microstrip lines
Microwaves
MMIC (circuits)
Transformers
Online AccessGet full text

Cover

More Information
Summary:Using a microstrip line employing periodically perforated ground metal on a GaAs monolithic microwave integrated circuit (MMIC), a highly miniaturised and broadband impedance transformer was developed for application to low impedance matching in broadband. Its size was 0.132 mm2 on GaAs substrate, which was 2.3% of the one fabricated by a conventional microstrip line. The transformer showed good RF performance over a broadband, including ultra-wideband. This is the first report of an on-chip broadband impedance transformer fabricated on MMIC.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0013-5194
1350-911X