Short-wavelength GaInNAs/GaAs semiconductor disk lasers

The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1,160 nm-1,210 nm wavelength range is reported.

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Bibliographic Details
Published inElectronics letters Vol. 44; no. 18; p. 1
Main Authors Vetter, S L, Hastie, J E, Korpijarvi, V-M, Puustinen, J, Guina, M, Okhotnikov, O, Calvez, S, Dawson, M D
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 28.08.2008
Subjects
Disks
Emission
Gallium arsenide
Gallium arsenides
Lasers
Semiconductors
Wavelengths
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Summary:The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1,160 nm-1,210 nm wavelength range is reported.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0013-5194
1350-911X