Infrared spectroscopy of hole-doped ABA-stacked trilayer graphene

Using infrared spectroscopy, the authors investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. They find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra...

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Bibliographic Details
Published inEurophysics letters Vol. 100; no. 5; p. 1
Main Authors Ubrig, N, Blake, P, van der Marel, D, Kuzmenko, A B
Format Journal Article
LanguageEnglish
Published Les Ulis IOP Publishing 01.12.2012
Subjects
Charge density
Dielectric constant
Graphene
Infrared spectroscopy
Interlayers
Permittivity
Reflectivity
Spectra
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Summary:Using infrared spectroscopy, the authors investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. They find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows the authors to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher-energy bands.
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ISSN:0295-5075
1286-4854