InGaP/InGaAs double delta-doped channel transistor

A new InGaP/InGaAs double d-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF pe...

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Bibliographic Details
Published inElectronics letters Vol. 39; no. 13; p. 1
Main Authors Chuang, Hung-Ming, Cheng, Shiou-Ying, Liao, Xin-Da, Chen, Chun-Yuan, Liu, Wen-Chau
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 26.06.2003
Subjects
Channels
Electric potential
Leakage current
Microwaves
Operating temperature
Semiconductor devices
Transistors
Voltage
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Summary:A new InGaP/InGaAs double d-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0013-5194
1350-911X