Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes

• Published in: Electronics letters Vol. 36; no. 21; p. 1
• Main Authors: Boeve, H, Sousa, R C, Freitas, P P, De Boeck, J, Borghs, G
• Format: Journal Article
• Language: English
• Published: Stevenage John Wiley & Sons, Inc 12.10.2000
• Subjects: Arrays; Diodes; Electric potential; Gallium arsenide; Gallium arsenides; Semiconductors; Tunnel junctions; Voltage

Magnetic tunnel junctions have been the subject of a study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance mat...