Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes

Magnetic tunnel junctions have been the subject of a study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance mat...

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Bibliographic Details
Published inElectronics letters Vol. 36; no. 21; p. 1
Main Authors Boeve, H, Sousa, R C, Freitas, P P, De Boeck, J, Borghs, G
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 12.10.2000
Subjects
Arrays
Diodes
Electric potential
Gallium arsenide
Gallium arsenides
Semiconductors
Tunnel junctions
Voltage
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Summary:Magnetic tunnel junctions have been the subject of a study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance matching between both elements is essential to optimise the output characteristics, i.e. the absolute voltage or current difference between the two magnetic states.
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ISSN:0013-5194
1350-911X