Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, the patterning of positive and negative charges spatially on n- and p-type organic field effect transistors, respectively, on the same wafer. Using the proposed fabric...

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Bibliographic Details
Published inElectronics letters Vol. 46; no. 19; p. 1
Main Authors Dhar, B M, Özgün, R, Jung, B J, Katz, H E, Andreou, A G
Format Journal Article
LanguageEnglish
Published Stevenage John Wiley & Sons, Inc 16.09.2010
Subjects
Adjustment
Bias
CMOS
Field effect transistors
Inverters
Photolithography
Semiconductor devices
Thresholds
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Summary:A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, the patterning of positive and negative charges spatially on n- and p-type organic field effect transistors, respectively, on the same wafer. Using the proposed fabrication and threshold adjusting technique, the first organic FET-based CMOS inverter has been fabricated, that employs threshold adjustment for both p- and n-type transistors to bias them so that the inverter has maximum gain.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0013-5194
1350-911X