[Formula Omitted] Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation
The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO sub(2) MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute val...
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Published in | IEEE transactions on electron devices Vol. 55; no. 10; p. 2790 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.10.2008
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Subjects | |
Online Access | Get full text |
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Summary: | The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO sub(2) MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2008.2003031 |