[Formula Omitted] Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation

The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO sub(2) MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute val...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 55; no. 10; p. 2790
Main Authors Jiann-Shiun Yuan, Jiann-Shiun Yuan, Chuanzhao Yu, Chuanzhao Yu
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.10.2008
Subjects
Breakdown
Channels
Devices
Gates
Hafnium oxide
Hot electrons
Intermodulation
Mathematical models
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Summary:The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO sub(2) MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2003031