Lattice-Matched GaN-InAlN Waveguides at [lambda] = 1.55 [mu]m Grown by Metal-Organic Vapor Phase Epitaxy
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/...
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Published in | IEEE photonics technology letters Vol. 20; no. 2; pp. 102 - 104 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
15.01.2008
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Online Access | Get full text |
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Summary: | We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic- polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2007.912551 |