Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells
We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), bet...
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Published in | ACS applied materials & interfaces Vol. 5; no. 19; pp. 9429 - 9434 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
United States
09.10.2013
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Online Access | Get full text |
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Summary: | We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1944-8252 |
DOI: | 10.1021/am403243g |