Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells

We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), bet...

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Published inACS applied materials & interfaces Vol. 5; no. 19; pp. 9429 - 9434
Main Authors Younis, Adnan, Chu, Dewei, Mihail, Ionsecu, Li, Sean
Format Journal Article
LanguageEnglish
Published United States 09.10.2013
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Summary:We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
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ISSN:1944-8252
DOI:10.1021/am403243g