Influence of Ga on the luminescence efficiency of Er-doped Ge-S-Ga glasses

• Published in: Journal of materials science. Materials in electronics Vol. 14; no. 10-12; pp. 761 - 762
• Main Authors: IVANOVA, Z. G, ANEVA, Z, CERNOSEK, Z, CERNOSKOVA, E, VASSILEV, V. S
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Norwell, MA Springer 01.10.2003; Springer Nature B.V
• Subjects: Amorphous materials, glasses and other disordered solids; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Gallium; Glass; Luminescence; Materials science; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Spectra; Spectroscopy; Spectrum analysis; Gallium sulfides; Inorganic compounds; Impurity density; Ternary compounds; Doping; Photoluminescence; Germanium sulfides; Experimental study; Chalcogenide glasses; Energy-level transitions; Deconvolution; Chemical composition; Impurity states; Erbium additions
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/A:1026128515241

Photoluminescence (PL) spectroscopy has been applied to a series of Er-doped (GeS(2))(100-x) (Ga(2)S(3))(x) glasses with varying x(0, 10, 20, and 25 mol %) and at a constant content of 0.6 mol % Er(2)S(3). The PL band at 1534 nm, excited with 1064-nm light, has been characterized. The corresponding transitions in the Er(3+) energy-level diagram have been specified by deconvolution of the spectra. It has been found that the PL intensity of the glasses becomes more definitive at x > 10, and increases by about 30 times with the addition of 25 mol % Ga(2)S(3).