Photo- and thermo-induced bandgap and volume changes in Ge-based chalcogenide films

Irreversible and reversible changes induced by illumination and/or annealing of thin Ge-AsS films are studied. Attention is paid to the volume (thickness) changes and their correlation with changes in the bandgap. The revealed dependences are compared to that obtained for obliquely deposited As(Ge)-...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 14; no. 10-12; pp. 835 - 836
Main Authors ARSOVA, D, PAMUKCHIEVA, V, VATEVA, E, SKORDEVA, E
Format Conference Proceeding Journal Article
LanguageEnglish
Published Norwell, MA Springer 01.10.2003
Springer Nature B.V
Subjects
Amorphous semiconductors; glasses
Amorphous semiconductors; glasses; nanocrystalline materials
Annealing
Chalcogenides
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Correlation
Deposition
Electronics
Exact sciences and technology
Illumination
Materials science
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Thin films
Thin films
Thickness
Energy gap
Annealing
Ternary compounds
Illumination
Photoinduced effect
Germanium Arsenides sulfides
Experimental study
Chalcogenide glasses
Photobleaching
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Summary:Irreversible and reversible changes induced by illumination and/or annealing of thin Ge-AsS films are studied. Attention is paid to the volume (thickness) changes and their correlation with changes in the bandgap. The revealed dependences are compared to that obtained for obliquely deposited As(Ge)-S films, and substantial differences are found.
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ISSN:0957-4522
1573-482X
DOI:10.1023/A:1026194329779