Modification of SiC precursors with an amine-borane complex

Two methods for preparing precursors of Si/C/B-based thermostructural materials have been developed. The first consists of a thermal treatment of a mixture of polydimethylsilane (PDMS), (Me2Si)n, and triethylamine–borane adduct, Et3N : BH3 at atmospheric pressure. The second involves two steps: (i)...

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Bibliographic Details
Published inJournal of materials science Vol. 32; no. 12; pp. 3237 - 3242
Main Authors TAZI HEMIDA, A, PAILLER, R, BIROT, M, PILLOT, J. P, DUNOGUES, J
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 1997
Springer Nature B.V
Subjects
Applied sciences
Atmospheric pressure
Boron
Building materials. Ceramics. Glasses
Ceramic industries
Chemical industry and chemicals
Exact sciences and technology
Heat treatment
Materials science
Polydimethylsiloxane
Precursors
Silicone resins
Structural ceramics
Technical ceramics
Triethylamine
Pyrolysis
Silicon Borides carbides
Borane
Chemical modification
Silicon Carbides
Manufacturing
Experimental study
Precursor
Adduct
Silicon polymer
Non oxide ceramics
Structural ceramic
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Summary:Two methods for preparing precursors of Si/C/B-based thermostructural materials have been developed. The first consists of a thermal treatment of a mixture of polydimethylsilane (PDMS), (Me2Si)n, and triethylamine–borane adduct, Et3N : BH3 at atmospheric pressure. The second involves two steps: (i) transformation of PDMS into a polymer displaying Si–CH2–Si and Si–Si linkages in its backbone, and (ii) heating this product at atmospheric pressure, in the presence of Et3N: BH3. The ceramic material obtained from the second approach contains 2.2 at% boron and 1.5 at% oxygen.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-2461
1573-4803
DOI:10.1023/A:1018619205428