Annealing characteristics of Si doped amorphous silica films by rf sputtering

• Published in: Journal of materials science Vol. 34; no. 2; pp. 267 - 271
• Main Authors: YOSHIDA, S, HANADA, T, TANABE, S, SOGA, N
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 1999; Springer Nature B.V
• Subjects: Absorption; Annealing; Clustering; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Inert atmospheres; Infrared analysis; Magnetron sputtering; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; NMR; Nuclear magnetic resonance; Photoelectrons; Physics; Silicon dioxide; Spectrum analysis; X ray fluorescence analysis; X ray photoelectron spectroscopy; Inorganic compounds; Semiconductor materials; Films; X ray fluorescence; Doping; Infrared absorption; Binary compounds; Amorphous state; Experimental study; Photoelectron spectroscopy; Silicon additions; Magic angle; Magnetrons; Silicon 29; Silicon oxides; Chemical bonds; X radiation; NMR spectra; Thermal annealing; Radiofrequency sputtering
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1023/A:1004441203187

Si doped amorphous silica films were prepared by rf magnetron sputtering technique. As-deposited films which had relatively low Si dopant were annealed in inert atmosphere, and spectroscopic analyses were performed for as-deposited and all the annealed samples by infrared (IR) absorption, X-ray fluorescence analysis, X-ray photoelectron spectroscopy (XPS) and 29Si magic angle sample spinning nuclear magnetic resonance spectroscopy (29Si MAS-NMR). When the sample was annealed at 800°C, the IR absorption peak located at 1080 cm−1 shifted to slightly higher wave number. On the other hand, the decrease of Si clusters or Si–Si bonds in as-deposited film was deduced from X-ray fluorescence and XPS spectra for the sample annealed at 800°C. These annealing characteristics of the films prepared in this study were discussed based on the random bonding model of SiOx film, and the spectral variations with thermal annealing were interpreted by the rearrangement of Si and O atoms in as-deposited films, rather than the simple clustering of excess Si atoms.