Fracture strength characterization for 25 micron and 125 micron thick SOI-MEMS structures

• Published in: Journal of micromechanics and microengineering Vol. 25; no. 7; pp. 1 - 11
• Main Authors: Buchheit, Thomas E, Phinney, Leslie M
• Format: Journal Article
• Language: English
• Published: 01.07.2015
• Subjects: Atomic force microscopy; Atomic structure; Devices; Fracture strength; Morphology; Scanning electron microscopy; Strength; Stress concentration
• ISSN: 0960-1317; 1361-6439
• DOI: 10.1088/0960-1317/25/7/075018

MEMS structural devices are often fabricated by bulk-micromachining using a deep reactive ion-etching process (DRIE) for silicon. DRIE creates the high aspect ratio silicon features used as sensors and actuators in MEMS devices. This paper characterizes fracture strength distributions for DRIE etched MEMS test structures with device layer thicknesses of 25 mu m and 125 mu m using pull-table style strength test structures. The 25 mu m thick measurements offered a direct comparison with previous investigations; whereas, the 125 mu m thick measurements are unique to this study. The fracture strength distributions measured for 125 mu m thick specimens ranged to significantly lower values and had a narrower distribution compared to previous and current 25 mu m thick device layer fracture strength distributions, scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize and correlate surface roughness features with the observed fracture strength measurements. Characterization revealed that although both the 25 mu m and 125 mu m thick device layer structures predominantly exhibited scalloping sidewall morphology, the 125 mu m thick structures transitioned to rougher curtaining sidewall morphology towards the bottom of the device layer. The difference in strength distributions is attributed to this increased roughness present in the curtaining region and on the bottom surfaces of thicker device layers.