Effect of partial crystallization on formation of amorphous marks

The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used...

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Bibliographic Details
Published inSPIE proceedings series Vol. 4090; pp. 131 - 134
Main Authors Nelson, Kenric P, Lopez, Orlando, Ruane, Michael F
Format Conference Proceeding
LanguageEnglish
Published Bellingham WA SPIE 18.09.2000
Subjects
Applied sciences
Electronics
Exact sciences and technology
Magnetic and optical mass memories
Storage and reproduction of information
Thermal characteristic
Waveform
Optical storage
Optical disk
Experimental method
Crystallization
Data storage
Amorphous state
Data logging
Phase change materials
Reflectivity
Laser writing
Experimental result
Noise source
Photon scanning tunneling microscopy
Tagging
Rewriting systems
Static test
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Summary:The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used for the experiment. An 8% difference in reflectivity is measured between the amorphous marks formed in the fully crystallized, high reflectivity (R equals 43%) state and partially crystallized, low reflectivity (R equals 30%) state.
Bibliography:Conference Date: 2000-05-14|2000-05-17
Conference Location: Whistler, BC, Canada
ISBN:0819437336
9780819437334
ISSN:0277-786X
DOI:10.1117/12.399350