Properties of nanostructured layers formed on silicon

Thin nanostructured layers were formed on silicon substrate by the SSCT method. The microstructure of formed layers was experimentally examined by the TEM microscope. Morphological information from the TEM scans was analyzed by the multifractal methods. A set of theoretically generated structures wi...

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Bibliographic Details
Published inAIP conference proceedings Vol. 1996; no. 1
Main Authors Jurečka, Stanislav, Matsumoto, Taketoshi, Imamura, Kentaro, Kobayashi, Hikaru
Format Journal Article Conference Proceeding
LanguageEnglish
Published Melville American Institute of Physics 01.08.2018
Subjects
Fractals
Nanostructure
Silicon substrates
Thin films
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Summary:Thin nanostructured layers were formed on silicon substrate by the SSCT method. The microstructure of formed layers was experimentally examined by the TEM microscope. Morphological information from the TEM scans was analyzed by the multifractal methods. A set of theoretically generated structures with defined fractal properties was characterized by the multifractal methods and the results were used for the explanation of the real structure development during the forming procedure.
Bibliography:ObjectType-Conference Proceeding-1
SourceType-Conference Papers & Proceedings-1
content type line 21
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5048874