Determination of thickness of electrochemically etched Si layers passivated by Si3N4 by analysis of the experimental spectral reflectance

• Published in: AIP conference proceedings Vol. 2131; no. 1
• Main Authors: Králik, Martin, Jurečka, Stanislav, Pinčík, Emil
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Melville American Institute of Physics 29.07.2019
• Subjects: Boron; Effective medium theory; Electrochemical etching; Etching; Hydrofluoric acid; Optical properties; Photovoltaic cells; Porous silicon; Reflectance; Silicon substrates; Silicon wafers; Solar cells; Spectral reflectance; Thickness

Porous silicon (pSi) samples for photovoltaics applications were prepared by the method of electrochemical etching in the hydrofluoric acid (HF) solution. P-type silicon wafers (boron-doped) were used as substrate. Different parameters of the electrochemical etching method (electrical potential and...